F. Yamada, A. Oki, D. Streit, Y. Saito, A. R. Coulson, W.C. Atwood, E. Rezek
{"title":"Reliability of a high performance monolithic IC fabricated using a production GaAs/AlGaAs HBT process","authors":"F. Yamada, A. Oki, D. Streit, Y. Saito, A. R. Coulson, W.C. Atwood, E. Rezek","doi":"10.1109/GAAS.1994.636983","DOIUrl":null,"url":null,"abstract":"We report the world's first lifetest results of a monolithic integrated circuit fabricated using GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT) technology. The Successive Detection Logarithmic Amplifier (SDLA) was used as the standard evaluation circuit (SEC) to evaluate the HBT process. Results of a three temperature constant stress lifetest projects a median-time-to-failure (MTF) of >10/sup 7/ hours at 125/spl deg/C junction temperature with an activation energy (Ea) of 1.4 eV and log-sigma (/spl sigma/) of 0.7. Failure criteria were based on RF and DC characteristics of the SDLA. Failure mode is also discussed. This study establishes GaAs/AlGaAs HBT technology as a mature and reliable process technology.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report the world's first lifetest results of a monolithic integrated circuit fabricated using GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT) technology. The Successive Detection Logarithmic Amplifier (SDLA) was used as the standard evaluation circuit (SEC) to evaluate the HBT process. Results of a three temperature constant stress lifetest projects a median-time-to-failure (MTF) of >10/sup 7/ hours at 125/spl deg/C junction temperature with an activation energy (Ea) of 1.4 eV and log-sigma (/spl sigma/) of 0.7. Failure criteria were based on RF and DC characteristics of the SDLA. Failure mode is also discussed. This study establishes GaAs/AlGaAs HBT technology as a mature and reliable process technology.
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