Advanced boron-based ultra-low energy doping techniques on ultra-shallo junction fabrications

S. Qin, Y. J. Hu, A. Mcteer
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引用次数: 3

Abstract

The focus of this paper is a comparative study of the advanced boron-based ultra-low energy (ULE) doping techniques on ultra-shallow junction (USJ) fabrications, including beam-line atomic 11B implant, BF2, B18H22, C2B10H12 molecular implants, cluster B implant, and B2H6 and BF3 PLAD implants. It has been found that B2H6 PLAD and B18H22 molecular implants demonstrate the best RS-xj and abruptness characteristics. Beam-line BF2 implant shows poor RS-xj characteristics due to its serious RIE effect by F species. Cluster B implant shows the worst RS-xj characteristics and a very rough surface. Both are attributed to its serious self-sputtering effect because of its much larger and heavier ion species although further optimization may lead to improvement.
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超浅结制造中硼基超低能掺杂先进技术
本文的重点是比较研究了先进的硼基超低能(ULE)掺杂技术在超浅结(USJ)制造中的应用,包括束线原子11B植入物、BF2、B18H22、C2B10H12分子植入物、簇B植入物以及B2H6和BF3 PLAD植入物。发现B2H6 PLAD和B18H22分子植入物具有最佳的RS-xj和陡度特性。束线BF2植体受F种RIE影响严重,RS-xj特性较差。簇B种植体的RS-xj特征最差,表面非常粗糙。两者都归因于其严重的自溅射效应,因为它的离子种类更大、更重,尽管进一步的优化可能会导致改进。
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