K. Min, Young-Hee Kim, D. Kim, Dong Myeong Kim, Jin-Hong Ahn
{"title":"A large-current-output boosted voltage generator with non-overlapping clock control for sub-1-V memory applications","authors":"K. Min, Young-Hee Kim, D. Kim, Dong Myeong Kim, Jin-Hong Ahn","doi":"10.1109/ASPDAC.2004.1337582","DOIUrl":null,"url":null,"abstract":"A new CMOS large-current-output positive pump is proposed and compared with the conventional pump. In this new pump scheme, two auxiliary pumps which are driven by nonoverlapping clocks control the transfer and precharge switches, respectively, increasing the 'ON' conductance of the transfer switches very much at sub-1-V-V/sub DD/ range. The output current improvement of this new pump reaches to 1.6 times larger than the conventional pump with an area penalty less than 10%. This new pump was fabricated in 0.35-/spl mu/m n-well process technology and its effectiveness is firstly verified.","PeriodicalId":426349,"journal":{"name":"ASP-DAC 2004: Asia and South Pacific Design Automation Conference 2004 (IEEE Cat. No.04EX753)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASP-DAC 2004: Asia and South Pacific Design Automation Conference 2004 (IEEE Cat. No.04EX753)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.2004.1337582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new CMOS large-current-output positive pump is proposed and compared with the conventional pump. In this new pump scheme, two auxiliary pumps which are driven by nonoverlapping clocks control the transfer and precharge switches, respectively, increasing the 'ON' conductance of the transfer switches very much at sub-1-V-V/sub DD/ range. The output current improvement of this new pump reaches to 1.6 times larger than the conventional pump with an area penalty less than 10%. This new pump was fabricated in 0.35-/spl mu/m n-well process technology and its effectiveness is firstly verified.
提出了一种新型的CMOS大电流输出正泵，并与传统泵进行了比较。在这个新的泵浦方案中，两个由非重叠时钟驱动的辅助泵分别控制转移开关和预充开关，在sub-1- v - v /sub - DD/范围内大大增加了转移开关的导通。该泵的输出电流比传统泵提高1.6倍，面积损失小于10%。该泵以0.35-/spl mu/m n井工艺制造，并首次验证了其有效性。
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