T. Watanabe, H. Ishiuchi, T. Tanaka, T. Mochizuki, O. Ozawa
{"title":"Mechanism of Oxide Leakage Current of Silicide Gate MOSFET's","authors":"T. Watanabe, H. Ishiuchi, T. Tanaka, T. Mochizuki, O. Ozawa","doi":"10.1109/IRPS.1984.362044","DOIUrl":null,"url":null,"abstract":"Oxide leakage currents of silicide gate MOSFET's have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Oxide leakage currents of silicide gate MOSFET's have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.
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