Reprogrammable, wide tuning range 1.6 GHz CMOS VCO with low phase noise variation

T. Papalias, T. Lee, A. Hajimiri, R. Dutton, T. Lee
{"title":"Reprogrammable, wide tuning range 1.6 GHz CMOS VCO with low phase noise variation","authors":"T. Papalias, T. Lee, A. Hajimiri, R. Dutton, T. Lee","doi":"10.1109/RFIC.2004.1320659","DOIUrl":null,"url":null,"abstract":"It is difficult to obtain simultaneously a large tuning range, low phase noise, and small phase noise variation, particularly while accommodating manufacturing and packaging tolerances. This work describes the first use of native EPROM devices (available in every standard CMOS technology) and switched reactances to relax these tradeoffs. In addition to permitting post-packaging compensation for manufacturing variations, the inherent reprogrammability of these cells also enables the rapid prototyping and optional reconfiguration of RF and mixed-signal systems. This technology allows the realization of a fully-integrated oscillator in 0.25 μm CMOS with a phase noise variation of under 10 dB (compared with 40 dB variation in a conventional implementation) over a 1.25 GHz to 1.92 GHz (42%) tuning range. The oscillator consumes 23 mW from a 3 V supply while exhibiting a phase noise of better than -93dBc/Hz at 100 kHz offset from a nominal 1.58 GHz center frequency.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2004.1320659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

It is difficult to obtain simultaneously a large tuning range, low phase noise, and small phase noise variation, particularly while accommodating manufacturing and packaging tolerances. This work describes the first use of native EPROM devices (available in every standard CMOS technology) and switched reactances to relax these tradeoffs. In addition to permitting post-packaging compensation for manufacturing variations, the inherent reprogrammability of these cells also enables the rapid prototyping and optional reconfiguration of RF and mixed-signal systems. This technology allows the realization of a fully-integrated oscillator in 0.25 μm CMOS with a phase noise variation of under 10 dB (compared with 40 dB variation in a conventional implementation) over a 1.25 GHz to 1.92 GHz (42%) tuning range. The oscillator consumes 23 mW from a 3 V supply while exhibiting a phase noise of better than -93dBc/Hz at 100 kHz offset from a nominal 1.58 GHz center frequency.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
可重新编程,宽调谐范围1.6 GHz CMOS压控振荡器低相位噪声变化
很难同时获得大调谐范围、低相位噪声和小相位噪声变化,特别是在适应制造和包装公差的情况下。这项工作描述了原生EPROM器件(可用于每种标准CMOS技术)和开关电抗的首次使用,以减轻这些权衡。除了允许对制造变化进行包装后补偿外,这些单元固有的可重新编程性也使射频和混合信号系统的快速原型和可选重新配置成为可能。该技术允许在0.25 μm CMOS中实现完全集成的振荡器,在1.25 GHz至1.92 GHz(42%)调谐范围内,相位噪声变化小于10 dB(传统实现为40 dB)。该振荡器从3 V电源消耗23 mW,同时在标称1.58 GHz中心频率的100 kHz偏移时显示出优于-93dBc/Hz的相位噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 77 GHz SiGe power amplifier for potential applications in automotive radar systems Overcome the phase noise optimization limit of differential LC oscillator with asymmetric capacitance tank structure [CMOS RFIC] A novel SiGe BiCMOS variable-gain active predistorter using current steering topologies Distributed MOS varactor biasing for VCO gain equalization in 0.13 /spl mu/m CMOS technology WLAN system trends and the implications for WLAN RFICs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1