Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion

S. Feng, J. Sauerer, D. Seitzer
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引用次数: 6

Abstract

The paper presents design considerations and implementation of analog components, including an operational amplifier, latched comparator, 1 bit D/A converter and second-order modulator, for a fully differential delta-sigma modulation oversampling A/D converter in a 0.5 /spl mu/m GaAs E/D HEMT technology. On-wafer measurements demonstrate that the second-order modulator achieves a 60 dB dynamic range at a Nyquist conversion rate of 5.0 MHz with a sampling frequency of 500 MHz.
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实现GaAs E/D HEMT模拟元件的过采样模拟/数字转换
本文介绍了模拟元件的设计考虑和实现,包括运算放大器,锁存比较器,1位D/A转换器和二阶调制器,用于0.5 /spl mu/m GaAs E/D HEMT技术的全差分δ - σ调制过采样A/D转换器。晶片上测量表明,二阶调制器在奈奎斯特转换速率为5.0 MHz、采样频率为500 MHz的情况下实现了60 dB的动态范围。
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