Structural characterization of hexagonal GaN thin films grown by MOCVD on 4H-SiC substrate

Heng Zhang, Longfei Xiao, Shuang Qu, Chengxin Wang, Xiaobo Hu, Xiangang Xu
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Abstract

A Si-doped GaN films was, grown on 4H-SiC by metal-organic chemical vapor deposition. It was found that the compressively strained layer of the film can be relaxed and surface structural quality can be improved by increasing the thickness of Si-doped GaN film. The critical thickness of beginning of two-dimension growth of GaN on 4H-SiC substrate by metal-organic chemical vapor deposition (MOCVD) has been systematically studied. We optimized growth time of GaN layer so that the GaN layer structral quality can be improved and the root mean square (RMS) roughness of surface can be reduced. With suitable growth time of GaN layer, crack-free 600 nm GaN was obtained and the full-width at half-maximum (FWHM) of (0 0 2) plane rocking curve measured by double crystal X-ray diffraction (DCXRD) was as low as 279.6 arcsec. This kind of film can be used as a high-quality buffer layer between the substrate and epitaxial layer.
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在4H-SiC衬底上MOCVD生长六方GaN薄膜的结构表征
采用金属有机化学气相沉积的方法,在4H-SiC上生长了掺杂si的GaN薄膜。结果表明,通过增加掺硅GaN薄膜的厚度,薄膜的压缩应变层可以得到松弛,表面结构质量可以得到改善。本文系统地研究了金属有机化学气相沉积(MOCVD)在4H-SiC衬底上氮化镓二维生长的临界厚度。通过优化GaN层的生长时间,提高了GaN层的结构质量,降低了表面的均方根粗糙度。通过适当的GaN层生长时间,获得了无裂纹的600 nm GaN,双晶x射线衍射(DCXRD)测量的(0 0 2)平面摇摆曲线的半最大值全宽度(FWHM)低至279.6 arcsec。这种薄膜可以作为衬底和外延层之间的优质缓冲层。
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