A low-noise, wide-band CMOS charge-sensitive preamplifier for use with APD/LSO PET detectors

M. Paulus, J. M. Rochelle, M. Andreaco, D. Binkley
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引用次数: 19

Abstract

The recent emergence of LSO as a potential scintillator for positron emission tomography (PET) and recent improvements in avalanche photodiode (APD) technology offer encouragement that an APD/LSO based PET detector may be commercially viable in the near future. An important component of any APD/LSO based PET detector will be the preamplifier used to read out the low-level detector signals. Due to the large number of detectors (>18,000) in a high-resolution PET scanner, the preamplifier must be implemented as a monolithic integrated circuit. Additionally, in order to achieve the timing resolution required for high resolution PET, the preamplifier must have a large band-width and a low equivalent input noise voltage. This paper presents a CMOS charge-sensitive preamplifier design which uses local feedback to improve the performance of the common gate transistor. The modified cascode circuit is analyzed and compared with a previously reported simple folded cascode circuit. A prototype circuit was fabricated in a 2 /spl mu/m NWELL CMOS process. The prototype amplifier has a measured 10-90% rise-time of 7 ns with an external input capacitance of /spl sim/6 pF and has an equivalent input noise voltage of /spl sim/1.1 nV/rt-Hz above the flicker noise corner. A pulse height resolution of 14.3% FWHM and a timing resolution of 1.57 ns FWHM (vs. plastic) were obtained with the preamplifier, an Advanced Photonix 5 mm diameter beveled-edge APD and 3.5/spl times/3.5/spl times/22 mm/sup 3/ Teflon wrapped LSO crystal.
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一种低噪声,宽带CMOS电荷敏感前置放大器,用于APD/LSO PET探测器
最近LSO作为正电子发射断层扫描(PET)的潜在闪烁体的出现,以及雪崩光电二极管(APD)技术的最新改进,都鼓励了基于APD/LSO的PET探测器在不久的将来可能具有商业可行性。任何基于APD/LSO的PET检测器的一个重要组成部分将是用于读出低电平检测器信号的前置放大器。由于高分辨率PET扫描仪中有大量的检测器(>18,000),前置放大器必须作为单片集成电路实现。此外,为了达到高分辨率PET所需的时序分辨率,前置放大器必须具有较大的带宽和较低的等效输入噪声电压。本文提出了一种采用局部反馈的CMOS电荷敏感前置放大器设计方案,以提高共栅晶体管的性能。对改进的级联电路进行了分析,并与先前报道的简单折叠级联电路进行了比较。采用2 /spl mu/m NWELL CMOS工艺制作了原型电路。该原型放大器的测量上升时间为10-90%,为7 ns,外部输入电容为/spl sim/6 pF,在闪烁噪声角上方的等效输入噪声电压为/spl sim/1.1 nV/rt-Hz。使用前置放大器、Advanced Photonix 5 mm直径的斜边APD和3.5/spl倍/3.5/spl倍/22 mm/sup / Teflon包裹的LSO晶体,获得了14.3% FWHM的脉冲高度分辨率和1.57 ns FWHM的时序分辨率(相对于塑料)。
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