Compared current-voltage characteristics of silicon and cubic silicon caibine pn-junction based on the silicon substrate

Zhi Yang, Yao Ma, Yun Li, Xin Zhao, M. Gong
{"title":"Compared current-voltage characteristics of silicon and cubic silicon caibine pn-junction based on the silicon substrate","authors":"Zhi Yang, Yao Ma, Yun Li, Xin Zhao, M. Gong","doi":"10.1109/INEC.2016.7589377","DOIUrl":null,"url":null,"abstract":"Cubic silicon carbide pn junction was synthesized on Silicon substrate by Low pressure chemical vapor deposition. The methane diluted with Hydrogen was used as the reaction carbon source, while silicon substrate was used as the silicon source. The cubic silicon carbide films were characterized by X-ray diffraction, high resolution transmission electron microscopy and current-voltage. It is found that the threshold voltage of cubic silicon carbide is bigger than Si pn junction and the electronic characteristics of cubic silicon carbide pn junction is quite insensitive to ultraviolet light.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Cubic silicon carbide pn junction was synthesized on Silicon substrate by Low pressure chemical vapor deposition. The methane diluted with Hydrogen was used as the reaction carbon source, while silicon substrate was used as the silicon source. The cubic silicon carbide films were characterized by X-ray diffraction, high resolution transmission electron microscopy and current-voltage. It is found that the threshold voltage of cubic silicon carbide is bigger than Si pn junction and the electronic characteristics of cubic silicon carbide pn junction is quite insensitive to ultraviolet light.
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比较了基于硅衬底的硅和立方硅格子pn结的电流电压特性
采用低压化学气相沉积法在硅衬底上合成了立方碳化硅pn结。以氢气稀释后的甲烷作为反应碳源,硅衬底作为硅源。采用x射线衍射、高分辨透射电镜和电流-电压等手段对制备的立方碳化硅薄膜进行了表征。发现立方碳化硅的阈值电压大于Si pn结,并且立方碳化硅pn结的电子特性对紫外光非常不敏感。
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