Individual device active cooling for enhanced system-level power density and more uniform temperature distribution

Y. Zeng, A. Hussein, A. Castellazzi
{"title":"Individual device active cooling for enhanced system-level power density and more uniform temperature distribution","authors":"Y. Zeng, A. Hussein, A. Castellazzi","doi":"10.1109/ISPSD.2018.8393705","DOIUrl":null,"url":null,"abstract":"This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
单个设备主动冷却,增强系统级功率密度和更均匀的温度分布
提出了一种单机主动冷却系统平衡系统级功率密度温度分布的方法。用3L-ANPC GaN逆变器进行了测试,证明了该逆变器在多级系统中的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
CMOS bi-directional ultra-wideband galvanically isolated die-to-die communication utilizing a double-isolated transformer Local lifetime control for enhanced ruggedness of HVDC thyristors P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness Influence of the off-state gate-source voltage on the transient drain current response of SiC MOSFETs Reduction of RonA retaining high threshold voltage in SiC DioMOS by improved channel design
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1