Impact of VLSI technology scaling on HTOL

R. Kwasnick, M. Reilly, J. Hatfield, S. C. Johnson, A. Rahman
{"title":"Impact of VLSI technology scaling on HTOL","authors":"R. Kwasnick, M. Reilly, J. Hatfield, S. C. Johnson, A. Rahman","doi":"10.1109/IRPS.2012.6241850","DOIUrl":null,"url":null,"abstract":"High Temperature Operating Life (HTOL) is a standard stress used in IC product qualification. With VLSI technology scaling, gate dielectric TDDB models have higher acceleration factors leading to an increase in predicted HTOL failure, particularly with the transition to high-k gate dielectrics. However, cumulative end-of-life field failures remain substantially unchanged from previous technologies. A calculator tool which comprehends both field and HTOL failure modeling illustrates the trend and guides product qualification expectations.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

High Temperature Operating Life (HTOL) is a standard stress used in IC product qualification. With VLSI technology scaling, gate dielectric TDDB models have higher acceleration factors leading to an increase in predicted HTOL failure, particularly with the transition to high-k gate dielectrics. However, cumulative end-of-life field failures remain substantially unchanged from previous technologies. A calculator tool which comprehends both field and HTOL failure modeling illustrates the trend and guides product qualification expectations.
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VLSI技术规模对HTOL的影响
高温工作寿命(HTOL)是集成电路产品鉴定中使用的标准应力。随着VLSI技术的缩放,栅极电介质TDDB模型具有更高的加速因子,导致预测的HTOL故障增加,特别是过渡到高k栅极电介质时。然而,与以前的技术相比,累积的寿命终止现场故障基本没有变化。一个同时理解现场和HTOL故障建模的计算器工具说明了这一趋势并指导了产品质量预期。
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