Modeling of temperature characteristics for metal-ferroelectric-insulator-semiconductor devices

Abstract

Modeling of temperature characteristics for metal-ferroelectric-insulator-semiconductor devices is given in detail in this paper. Based on the Miller model, the polarization, the electric field in ferroelectric layer, surface potential, and drain-to-source current with gate voltage are investigated over a wide temperature range from 300 K to 600 K. From the model results, for the first time, we find that the semiconductor substrate can lead to the ferroelectric imprint under different temperatures, and there exists a zero-temperature-coefficient bias point in the transfer characteristic curves as conventional metal-oxide-semiconductor devices.