Switching Ringing Suppression of SiC MOSFET in a Phase-Leg Configuration

Abstract

EEE This paper analyses the switching ringing mechanism of Silicon Carbide (SiC) MOSFET and proposes some suppression methods based on experiments. In a phase-leg configuration, the SiC MOSFET can be operated under high switching frequency and high temperature with high voltage and current, in which case, the biggest challenge for SiC MOSFET is the electromagnetic interference (EMI). To utilize the full potential of SiC MOSFET and suppress the switching ringing as much as possible, this paper investigates the causes of switching ringing and proposes some suppression methods. Common suppression methods include increasing gate drive resistance, gate source shunt capacitance, and gate reverse turn-off voltage. Based on CREE CAS300M12BM2 SiC MOSFETs, the experimental results show that the suppression methods are effective to suppress switching ringing.