Y. Li, J. Terry, S. Smith, A. Walton, G. McHale, B. Xu
{"title":"Elastic instabilities induced large surface strain sensing structures (EILS)","authors":"Y. Li, J. Terry, S. Smith, A. Walton, G. McHale, B. Xu","doi":"10.1109/ICMTS.2015.7106116","DOIUrl":null,"url":null,"abstract":"This paper reports on the sensing of large strain using a mechanically actuated switch gate and a variable resistor surface creasing test structure. Test structures with different gate and interconnect/wiring geometries have been designed, fabricated and characterised. They respond to designed strain values with a reduction in device resistivity of 11 to 12 orders of magnitude. Results from strain measurements ranging from 0.2 to 0.6 are reported for test structures with electrode spaces of 10 to 60 μm.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106116","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports on the sensing of large strain using a mechanically actuated switch gate and a variable resistor surface creasing test structure. Test structures with different gate and interconnect/wiring geometries have been designed, fabricated and characterised. They respond to designed strain values with a reduction in device resistivity of 11 to 12 orders of magnitude. Results from strain measurements ranging from 0.2 to 0.6 are reported for test structures with electrode spaces of 10 to 60 μm.