D. Matsuo, T. Ikeda, S. Kishida, Yoshitaka Setogucti, Y. Andoh, Ryoko Miyanaga, M. Fujii, Y. Uraoka
{"title":"Threshold Voltage Control of In-Ga-Zn-O TFT without Thermal Annealing Process by Inductively Coupled Plasma Sputtering System","authors":"D. Matsuo, T. Ikeda, S. Kishida, Yoshitaka Setogucti, Y. Andoh, Ryoko Miyanaga, M. Fujii, Y. Uraoka","doi":"10.23919/AM-FPD.2018.8437432","DOIUrl":null,"url":null,"abstract":"This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ($V_{th}$) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two layer a-IGZO TFT with controlled oxygen concentrations was fabricated using the ICP sputtering system developed for high density thin film deposition. As a result of evaluation of TFT characteristics, a-IGZO TFTs with changed $V_{th}$ could be fabricated without a thermal annealing process.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2018.8437432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ($V_{th}$) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two layer a-IGZO TFT with controlled oxygen concentrations was fabricated using the ICP sputtering system developed for high density thin film deposition. As a result of evaluation of TFT characteristics, a-IGZO TFTs with changed $V_{th}$ could be fabricated without a thermal annealing process.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
