D. Bilevich, A. Popov, A. Salnikov, I. Dobush, A. E. Goryainov, A. Kalentyev, D. V. Garays
{"title":"Automatic Nonlinear Modeling Technique for Gaas HEMT","authors":"D. Bilevich, A. Popov, A. Salnikov, I. Dobush, A. E. Goryainov, A. Kalentyev, D. V. Garays","doi":"10.1109/DYNAMICS.2018.8601444","DOIUrl":null,"url":null,"abstract":"A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of nonlinear capacitances is described. A 0.15um GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multi-bias S-parameters and power characteristics.","PeriodicalId":394567,"journal":{"name":"2018 Dynamics of Systems, Mechanisms and Machines (Dynamics)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Dynamics of Systems, Mechanisms and Machines (Dynamics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DYNAMICS.2018.8601444","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of nonlinear capacitances is described. A 0.15um GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multi-bias S-parameters and power characteristics.
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