Adsorbed property of boron nitride nanotube (BNNT) device: A study of first-principles calculations

Nianduan Lu, Wei Wei, X. Chuai, Yuhan Mei, Ling Li, Ming Liu
{"title":"Adsorbed property of boron nitride nanotube (BNNT) device: A study of first-principles calculations","authors":"Nianduan Lu, Wei Wei, X. Chuai, Yuhan Mei, Ling Li, Ming Liu","doi":"10.1109/CAD-TFT.2018.8608049","DOIUrl":null,"url":null,"abstract":"Summary form only given. Sensors with high sensitivity and selectivity act as the role for real-time detections of a variety of industrial processes and environment. Currently, plenty of low dimensional materials, such as graphene, layered MoS2, and nanotubes, have been proposed as potential candidates of gas sensors. The nanotubes are generally porous due to their high reactivity exterior surface, which makes them sensitive to small molecular. As being important low-dimensional materials with wide band gaps, boron nitride nanotubes (BNNTs) have also received considerable interests. Despite the adsorption behavior of pure or doped BNNTs has been reported, the structure and electronic properties of adsorbed small molecule on BNNTs is still ambiguous. Here, we investigate the structure and electronic property of BNNTs device with absorbed small molecules, and then effect of physisorbed small molecules. Fig. 1 displays a BNNT device structure for gas sensors. The first-principles calculations are performed within the framework of density function theory (DFT) by using GGA-PW91. It is found that the sites of LOMO and HOMO would be changed after BNNTs absorbed the different small molecules. The energy gap of BNNTs decreases with increasing the distance between small molecule and BNNT. The adsorption effect of BNNT will be optimal as the distance between the small molecule and BNNT is from 1 to 1.5 Å. The potential application of BNNT as highly sensitive gas sensor for N-based small molecules has also been discussed.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2018.8608049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Summary form only given. Sensors with high sensitivity and selectivity act as the role for real-time detections of a variety of industrial processes and environment. Currently, plenty of low dimensional materials, such as graphene, layered MoS2, and nanotubes, have been proposed as potential candidates of gas sensors. The nanotubes are generally porous due to their high reactivity exterior surface, which makes them sensitive to small molecular. As being important low-dimensional materials with wide band gaps, boron nitride nanotubes (BNNTs) have also received considerable interests. Despite the adsorption behavior of pure or doped BNNTs has been reported, the structure and electronic properties of adsorbed small molecule on BNNTs is still ambiguous. Here, we investigate the structure and electronic property of BNNTs device with absorbed small molecules, and then effect of physisorbed small molecules. Fig. 1 displays a BNNT device structure for gas sensors. The first-principles calculations are performed within the framework of density function theory (DFT) by using GGA-PW91. It is found that the sites of LOMO and HOMO would be changed after BNNTs absorbed the different small molecules. The energy gap of BNNTs decreases with increasing the distance between small molecule and BNNT. The adsorption effect of BNNT will be optimal as the distance between the small molecule and BNNT is from 1 to 1.5 Å. The potential application of BNNT as highly sensitive gas sensor for N-based small molecules has also been discussed.
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氮化硼纳米管(BNNT)器件的吸附性能:第一性原理计算研究
只提供摘要形式。具有高灵敏度和选择性的传感器可用于各种工业过程和环境的实时检测。目前,许多低维材料,如石墨烯、层状二硫化钼和纳米管,都被认为是气体传感器的潜在候选材料。由于纳米管的外表面具有高反应性,因此它们通常具有多孔性,这使得它们对小分子敏感。氮化硼纳米管作为一种重要的低维宽带隙材料,也受到了广泛的关注。尽管已经报道了纯bnnt或掺杂bnnt的吸附行为,但吸附在bnnt上的小分子的结构和电子性质仍然不明确。本文研究了吸收小分子的BNNTs器件的结构和电子性能,以及物理吸收小分子对BNNTs器件的影响。图1显示了用于气体传感器的BNNT器件结构。利用GGA-PW91在密度泛函理论(DFT)框架下进行第一性原理计算。发现bnnt吸收不同的小分子后,LOMO和HOMO的位置发生了变化。BNNT的能隙随着小分子与BNNT之间距离的增加而减小。当小分子与BNNT的距离为1 ~ 1.5 Å时,BNNT的吸附效果最佳。本文还讨论了BNNT作为n基小分子高灵敏度气体传感器的潜在应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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