Our previous drain current model for the organic and amorphous InGaZnO thin-film transistors is applied to the amorphous and polycrystalline silicon thin-film transistors. In the drain current model, it is assumed that the trapped carrier concentration is much higher than the free carrier concentration considering both deep trap states and tail trap states in the energy gap of the thin film. The model is valid in both subthreshold and above-threshold regime, and is verified by the available experimental data at different temperatures.
{"title":"Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States","authors":"Hongyu He, Yuan Liu, B. Yan, Xinnan Lin, Xueren Zheng, Shengdong Zhang","doi":"10.1109/CAD-TFT.2018.8608111","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608111","url":null,"abstract":"Our previous drain current model for the organic and amorphous InGaZnO thin-film transistors is applied to the amorphous and polycrystalline silicon thin-film transistors. In the drain current model, it is assumed that the trapped carrier concentration is much higher than the free carrier concentration considering both deep trap states and tail trap states in the energy gap of the thin film. The model is valid in both subthreshold and above-threshold regime, and is verified by the available experimental data at different temperatures.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121899114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608051
Huan Yang, Xiaoliang Zhou, Shengdong Zhang, Gongtan Li, Shan Li
This work investigates the effects of O2 plasma treatments on the performances of back-channel-etched (BCE) a-IGZO TFT. Results indicate that the O2 plasma treatment significantly improves the subthreshold swing (SS) and the performance stability under the negative gate bias stress. It is suggested that the improvement be attributed to the reduction of indium (In) and the defect state at the back channel surface.
{"title":"Performance Improvement of Back-Channel-Etched a-IGZO TFTs by O2 Plasma Treatment","authors":"Huan Yang, Xiaoliang Zhou, Shengdong Zhang, Gongtan Li, Shan Li","doi":"10.1109/CAD-TFT.2018.8608051","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608051","url":null,"abstract":"This work investigates the effects of O2 plasma treatments on the performances of back-channel-etched (BCE) a-IGZO TFT. Results indicate that the O2 plasma treatment significantly improves the subthreshold swing (SS) and the performance stability under the negative gate bias stress. It is suggested that the improvement be attributed to the reduction of indium (In) and the defect state at the back channel surface.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131482967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608106
Ting-Yao Gao, Mingxiang Wang, Huaisheng Wang
Four-terminal poly-Si TFTs with a counter-doped body terminal connected to the floating channel have superior immunity to both DC and dynamic hot-carrier (HC) degradation. With three-dimensional TCAD simulation, the underlying suppression mechanisms are clarified to be respectively the weakened parasitic BJT effect and lowering of the drain electric field by carrier injection from the body terminal for the DC and AC cases. Dependence of the degradation suppression on the position and width of the terminal is analyzed. A wider body terminal or that closer to the drain has better suppression effect.
{"title":"TCAD Analysis on Suppression of Hot-Carrier Degradation of the Four-terminal Poly-Si TFTs","authors":"Ting-Yao Gao, Mingxiang Wang, Huaisheng Wang","doi":"10.1109/CAD-TFT.2018.8608106","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608106","url":null,"abstract":"Four-terminal poly-Si TFTs with a counter-doped body terminal connected to the floating channel have superior immunity to both DC and dynamic hot-carrier (HC) degradation. With three-dimensional TCAD simulation, the underlying suppression mechanisms are clarified to be respectively the weakened parasitic BJT effect and lowering of the drain electric field by carrier injection from the body terminal for the DC and AC cases. Dependence of the degradation suppression on the position and width of the terminal is analyzed. A wider body terminal or that closer to the drain has better suppression effect.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114959740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We insert a low-temperature deposited (L-D) SiO2 between the high-temperature deposited (H-D) SiO2 and In-Ga-Zn-O (IGZO) active layer to enhance the TFT performance. Compared with the single SiO2 TFT, the performance of the double-layer SiO2 TFT shows obvious improvements, for instance, the saturation mobility (μsat) increases from 0.21 to 0.98 cm2/V•s, the subthreshold swing (SS) decreases from 1.05 to 0.506 V/decade and the Ion/Ioff increases from 8.2×105 to 1.28×106.
{"title":"Performance enhancement of In-Ga-Zn-O TFTs using double-layer gate dielectric","authors":"Xiaobin Zhou, Dedong Han, Junchen Dong, Huijin Li, Xing Zhang, Yi Wang, Wen Yu, Shengdong Zhang","doi":"10.1109/CAD-TFT.2018.8608108","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608108","url":null,"abstract":"We insert a low-temperature deposited (L-D) SiO<inf>2</inf> between the high-temperature deposited (H-D) SiO2 and In-Ga-Zn-O (IGZO) active layer to enhance the TFT performance. Compared with the single SiO2 TFT, the performance of the double-layer SiO<inf>2</inf> TFT shows obvious improvements, for instance, the saturation mobility (μ<inf>sat</inf>) increases from 0.21 to 0.98 cm<sup>2</sup>/V•s, the subthreshold swing (SS) decreases from 1.05 to 0.506 V/decade and the I<inf>on</inf>/I<inf>off</inf> increases from 8.2×10<sup>5</sup> to 1.28×10<sup>6</sup>.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126420253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608115
Yan Xue, Baixiang Han, Yongliang Huang, Liuqi Zhang, Xian Wang, Shuai Zhou, Xiang Xiao, Gary Chaw, Congwei Liao, Shengdong Zhang
In this paper, we demonstrated a 15-inch AMOLED display with the application of top-gate typed thin-film-transistors (TFTs). Particularly, the display was derived by gate driver on array circuit (GOA) with a panel resolution of HD (540×960). When the display was tape out, the I-V curves of TFTs were characterized by a Keithley-4200 equipment. Moreover, a jig and oscilloscope were utilized to testify the function of the GOA circuit. At last, this display was derived by GOA and a photograph of the display was shown.
{"title":"The design of a 15-inch AMOLED display derived by GOA","authors":"Yan Xue, Baixiang Han, Yongliang Huang, Liuqi Zhang, Xian Wang, Shuai Zhou, Xiang Xiao, Gary Chaw, Congwei Liao, Shengdong Zhang","doi":"10.1109/CAD-TFT.2018.8608115","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608115","url":null,"abstract":"In this paper, we demonstrated a 15-inch AMOLED display with the application of top-gate typed thin-film-transistors (TFTs). Particularly, the display was derived by gate driver on array circuit (GOA) with a panel resolution of HD (540×960). When the display was tape out, the I-V curves of TFTs were characterized by a Keithley-4200 equipment. Moreover, a jig and oscilloscope were utilized to testify the function of the GOA circuit. At last, this display was derived by GOA and a photograph of the display was shown.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"4 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114129261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608104
Xuewen Shi, Congyan Lu, Di Geng, Jiawei Wang, Nianduan Lu, Ling Li, Ming Liu
Science the first report of indium-gallium-zinc-oxide (a-IGZO) thin-film transistors, it had attracted numerous researchers to explore this new materials [1] . For practical applications, it is critical to gain a stable devices and passivation process could give raise to improvement of stabilities [2] , [3] . In this paper, we investigated the influence of organic passivation layer, parylene, on performance and stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The results showed that after deposition of parylene for passivation layer, the subthreshold swing (SS) was reduced as illustrated in Fig. 2 . Besides, we also test the device stability under positive gate bias stress. During PBS, source and drain electrodes are grounded with gate voltage is 15V. Before voltage stress, threshold voltage is obtained by transfer curve in linear region as a reference. And after a specific time scale, the transfer curve was tested again. The obtained threshold voltage evolution with stressed time was shown in Fig. 3 . The improved performance and stability of devices can be contributed to the reduction of trap density in back channel from environment [4] . By capping a passivation layer, the factors such as moisture and oxygen can be excluded from active layer. Usually those molecules working as defect destroy the device performances. This enhanced performance implied parylene-passivated a-IGZO thin-film transistors could be used in the future application of flexible displays.
{"title":"Influences of Organic Passivation on performance of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors","authors":"Xuewen Shi, Congyan Lu, Di Geng, Jiawei Wang, Nianduan Lu, Ling Li, Ming Liu","doi":"10.1109/CAD-TFT.2018.8608104","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608104","url":null,"abstract":"Science the first report of indium-gallium-zinc-oxide (a-IGZO) thin-film transistors, it had attracted numerous researchers to explore this new materials [1] . For practical applications, it is critical to gain a stable devices and passivation process could give raise to improvement of stabilities [2] , [3] . In this paper, we investigated the influence of organic passivation layer, parylene, on performance and stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The results showed that after deposition of parylene for passivation layer, the subthreshold swing (SS) was reduced as illustrated in Fig. 2 . Besides, we also test the device stability under positive gate bias stress. During PBS, source and drain electrodes are grounded with gate voltage is 15V. Before voltage stress, threshold voltage is obtained by transfer curve in linear region as a reference. And after a specific time scale, the transfer curve was tested again. The obtained threshold voltage evolution with stressed time was shown in Fig. 3 . The improved performance and stability of devices can be contributed to the reduction of trap density in back channel from environment [4] . By capping a passivation layer, the factors such as moisture and oxygen can be excluded from active layer. Usually those molecules working as defect destroy the device performances. This enhanced performance implied parylene-passivated a-IGZO thin-film transistors could be used in the future application of flexible displays.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"506 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116330175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608054
Wei Tang, Jiaqing Zhao, Qiaofeng Li, Xiaojun Guo
Low-voltage printable organic thin-film transistors with steep subthreshold swing were demonstrated and proposed to incorporate into ion-sensitive organic thin-film transistors (ISOTFTs). The resulting ISOTFTs demonstrated high pH sensitivity but very low power consumption.
{"title":"Highly Sensitive Low Power Ion-sensitive Organic Thin-Film Transistors","authors":"Wei Tang, Jiaqing Zhao, Qiaofeng Li, Xiaojun Guo","doi":"10.1109/CAD-TFT.2018.8608054","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608054","url":null,"abstract":"Low-voltage printable organic thin-film transistors with steep subthreshold swing were demonstrated and proposed to incorporate into ion-sensitive organic thin-film transistors (ISOTFTs). The resulting ISOTFTs demonstrated high pH sensitivity but very low power consumption.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125688766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608057
Sha Nie, Xiangyu Wang, Rui Liu, Shanshan Jiang, Xiaoqian Yang, Qing Wan
Ionic liquid /chitosan-coated paper showed a large specific gate electric-double-layer (EDL) capacitance of ~3.71 μF/cm2 at 1.0 Hz. The coated paper ITO-based TFT showed a low operating voltage, good electrical properties and high stability. Such flexible low-voltage TFTs is suitable for next-generation low-cost and portable new-concept flexible electronics
{"title":"Flexible ITO-Based TFTs on Paper Substrates","authors":"Sha Nie, Xiangyu Wang, Rui Liu, Shanshan Jiang, Xiaoqian Yang, Qing Wan","doi":"10.1109/CAD-TFT.2018.8608057","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608057","url":null,"abstract":"Ionic liquid /chitosan-coated paper showed a large specific gate electric-double-layer (EDL) capacitance of ~3.71 μF/cm2 at 1.0 Hz. The coated paper ITO-based TFT showed a low operating voltage, good electrical properties and high stability. Such flexible low-voltage TFTs is suitable for next-generation low-cost and portable new-concept flexible electronics","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117338080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608098
Wei Jiang, Qi Shan, Huaisheng Wang, Dongli Zhang, Mingxiang Wang
The effect of dynamic bending stress on the degradation of p-type flexible low-temperature poly-Si TFTs is investigated. Repeated bending stress causes TFT characteristic degradation, such as on-state current increase, positive threshold voltage shift, and "hump" appearance. Finite element analysis is used to analyze the strain distribution within TFT structure. Degradation approximately follows a linear trend with the number of bending cycles, and with the strain caused by the bending stress.
{"title":"Degradation of flexible LTPS TFTs under repetitive bending stress","authors":"Wei Jiang, Qi Shan, Huaisheng Wang, Dongli Zhang, Mingxiang Wang","doi":"10.1109/CAD-TFT.2018.8608098","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608098","url":null,"abstract":"The effect of dynamic bending stress on the degradation of p-type flexible low-temperature poly-Si TFTs is investigated. Repeated bending stress causes TFT characteristic degradation, such as on-state current increase, positive threshold voltage shift, and \"hump\" appearance. Finite element analysis is used to analyze the strain distribution within TFT structure. Degradation approximately follows a linear trend with the number of bending cycles, and with the strain caused by the bending stress.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121917029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/CAD-TFT.2018.8608099
Guangjia Li, Xinnan Lin, Yalan Zhang, Lining Zhang
For active matrix organic light emitting diode (AMOLED) pixel designs, co-simulations of OLED and TFTs are necessary and requires a dedicated OLED model. We report our efforts in developing a physics-based compact model of OLEDs for accurate reproduction of their electrical and luminescence characteristics. The model’s applicability in SPICE with smooth derivatives are demonstrated by AMOLED pixel simulations with light intensity as outputs.
{"title":"Compact Modeling of OLED for Co-simulations with TFTs","authors":"Guangjia Li, Xinnan Lin, Yalan Zhang, Lining Zhang","doi":"10.1109/CAD-TFT.2018.8608099","DOIUrl":"https://doi.org/10.1109/CAD-TFT.2018.8608099","url":null,"abstract":"For active matrix organic light emitting diode (AMOLED) pixel designs, co-simulations of OLED and TFTs are necessary and requires a dedicated OLED model. We report our efforts in developing a physics-based compact model of OLEDs for accurate reproduction of their electrical and luminescence characteristics. The model’s applicability in SPICE with smooth derivatives are demonstrated by AMOLED pixel simulations with light intensity as outputs.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121342730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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