Characteristics of flashover ion sources in magnetically insulated ion diode

Abstract

The effect of the irradiation of leakage electrons on the anode is evaluated by using two types of different magnetic field geometry of an applied B, magnetically insulated diode. For the geometry of Type 1 where leakage electrons are is rare, the diode turns on with large delay time and the efficiency was worse. For Type 2 where initial electron irradiation of the anode occurs, the turn on delay was reduced and a high current density ion beam was obtained with higher efficiency. From the result we see that electron bombardment strongly promotes the production of an anode plasma on the flashboard. The characteristic of the magnetically insulated diode in a multi-shot operation is investigated. Ion current density (J/sub i/) decreases with increasing number of shots. The reduction of J/sub i/ is found to be mainly due to the accumulation of conductive stick matter on the flashboard.