Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

R. Radha, A. Sakthivelu, Pradhabhan Raj
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Abstract

Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.
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SILAR沉积法制备钼掺杂ZnO薄膜及表征
采用连续离子层吸附反应(SILAR)沉积法在玻璃衬底上制备了钼(Mo)掺杂氧化锌(ZnO)薄膜。研究了Mo掺杂浓度为5、6.6和10 mol%对n型Mo掺杂ZnO薄膜结构、形貌、光学和电学性能的影响。x射线衍射(XRD)结果证实掺杂Mo的ZnO薄膜为纤锌矿结构的多晶薄膜。场发射扫描电镜(FESEM)研究表明,Mo掺杂改变了薄膜的表面形貌。在光学研究中观察到光学带隙的蓝移。研究了Mo掺杂浓度对电导率的影响,在Mo掺杂浓度为10 mol%时显示出较高的电导率。
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