{"title":"Review of 3D high density storage class memory (SCM) architecture","authors":"Brian Lee","doi":"10.1109/vlsi-tsa.2012.6210107","DOIUrl":null,"url":null,"abstract":"This paper describes a fundamental building block and architecture of future high density storage class memory products. A review of 3D architecture is presented. A detailed review of cross point select devices and memory cells are conducted followed by their integration scheme. A critical review of its challenges and potential solutions are proposed.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"525 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsi-tsa.2012.6210107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes a fundamental building block and architecture of future high density storage class memory products. A review of 3D architecture is presented. A detailed review of cross point select devices and memory cells are conducted followed by their integration scheme. A critical review of its challenges and potential solutions are proposed.