Metallic source and drain module for FDSOI MOSFETs applications

Abstract

We report on the development of metallic source and drain module for FDSOI MOSFETs including lateral salicidation of the channel edges and dopant segregation technique. Metal barrier type (TiN or Ti/TiN), optimized doping conditions, controlled PtSi penetration below spacers and suitable cleaning of the silicide surface lead to very low specific contact resistivity values (down to 0.1Ωµm²). We thus demonstrate metallic source and drain pMOSFETs with promising electrical behavior suitable for high performance applications (Ion=345µA.µm⁻¹ and Ioff=30nA.µm⁻¹ at −s1V for 50nm gate length). Using a similar approach, we also demonstrate state-of-the-art nMOSFETs fabricated with not yet optimized Er and Yb salicidation processes.