{"title":"The noise characteristics of baritt diodes with traps","authors":"V. Harutunian, V. Buniatian","doi":"10.1049/IJ-SSED.1979.0032","DOIUrl":null,"url":null,"abstract":"The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED.1979.0032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The noise characteristics of a semiconductor punchthrough structure are examined for operation under low-field conditions, i.e. constant mobility, and for trap levels in the bandgap of the semiconductor. It is shown that the noise measure is decreased under the influence of trapping of injected carriers, for the small-signal injection approximation. With the increase of the concentration of traps, the noise measure decreases, but the frequency band, where it takes place, narrows and is displaced to a lower frequency.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
