M. Armacost, A. Augustin, P. Felsner, Y. Feng, G. Friese, J. Heidenreich, G. Hueckel, O. Prigge, K. Stein
{"title":"A high reliability metal insulator metal capacitor for 0.18 /spl mu/m copper technology","authors":"M. Armacost, A. Augustin, P. Felsner, Y. Feng, G. Friese, J. Heidenreich, G. Hueckel, O. Prigge, K. Stein","doi":"10.1109/IEDM.2000.904282","DOIUrl":null,"url":null,"abstract":"A high reliability Metal-Insulator-Metal capacitor integrated into a 0.18 /spl mu/m CMOS foundry technology using Copper interconnects is discussed. Integration solutions specific to Copper processing are described and process yield and reliability results are presented on 0.72 fF//spl mu/m/sup 2/ capacitors. Performance and reliability metrics are shown to be comparable to those formed on Aluminum technologies.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"49","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 49
Abstract
A high reliability Metal-Insulator-Metal capacitor integrated into a 0.18 /spl mu/m CMOS foundry technology using Copper interconnects is discussed. Integration solutions specific to Copper processing are described and process yield and reliability results are presented on 0.72 fF//spl mu/m/sup 2/ capacitors. Performance and reliability metrics are shown to be comparable to those formed on Aluminum technologies.
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