{"title":"Design of Ku-band monolithic integrated power amplifier with analog predistorter","authors":"Cai Daomin","doi":"10.1109/IEEE-IWS.2019.8804067","DOIUrl":null,"url":null,"abstract":"This work presents the design of a integrated power amplifier with a built-in analog predistorter. The amplifier is based on 0.25um GaAs pHEMT process. The power amplifier adopts a two-stage common source structure, and an analog predistorter is added between the stages to improve the linearity of the power amplifier. The analog predistorter has a simple structure, low insertion loss and high integration, which is suitable for on-chip integration. The gain of amplifier is greater than 25dB in 16-18GHz. The IMD3 can achieve a maximum improvement of 30dB near the saturation power back-off of 3dB.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2019.8804067","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents the design of a integrated power amplifier with a built-in analog predistorter. The amplifier is based on 0.25um GaAs pHEMT process. The power amplifier adopts a two-stage common source structure, and an analog predistorter is added between the stages to improve the linearity of the power amplifier. The analog predistorter has a simple structure, low insertion loss and high integration, which is suitable for on-chip integration. The gain of amplifier is greater than 25dB in 16-18GHz. The IMD3 can achieve a maximum improvement of 30dB near the saturation power back-off of 3dB.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
