Effect of Recessed Gate Metal on Performance Analysis of GaAs Based DG-JLMOSFET

2023 International Conference on Electrical, Computer and Communication Engineering (ECCE) Pub Date : 2023-02-23 DOI:10.1109/ECCE57851.2023.10101640

K. M. Z. Rahman, Md. Akhter Uz Zaman, Sunjida Sultana, Md. Soyaeb Hasan, Shahriar Bin Salim, Wasi Mashrur, Md. Rafiqul Islam

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Abstract

The impact of recessed gate metal on the performance of double-gate junctionless MOSFET (DG-JLMOSFET) has been studied considering GaAs as channel material. The geometry of the gate metal is changed to obtain the best performance by recessing it to gate oxide for 1 nm vertically and extending it up to 9 nm horizontally on both sides. Changing the gate's geometrical shape and physical dimension, the leakage current is found to be reduced significantly for a fixed channel length of 10 nm. This results in a higher ION/IoFF ratio of ~ 1010 which in turn mitigates the drain induced barrier lowering (DIBL). The calculated results on various short channel effects (SCEs) indicate that the proposed model seems to have a greater drain current and a decreased subthreshold swing (SS) of 71 mV/Dec. The results of various figure of merits (FOMs) show that GaAs-based recessed gate DG-JLMOSFETs are extremely viable for the advancement of the upcoming nano-technology.

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嵌入式栅极金属对GaAs基DG-JLMOSFET性能分析的影响

以GaAs为沟道材料，研究了嵌入式栅极金属对双栅无结MOSFET (DG-JLMOSFET)性能的影响。通过将栅极金属垂直嵌入栅极氧化物1nm，并将其两侧水平延伸至9nm，从而改变栅极金属的几何形状以获得最佳性能。改变栅极的几何形状和物理尺寸，在固定的沟道长度为10 nm时，泄漏电流明显减小。这导致更高的离子/IoFF比~ 1010，从而减轻了漏极诱导势垒降低(DIBL)。对各种短通道效应(SCEs)的计算结果表明，所提出的模型具有更大的漏极电流和降低71 mV/Dec的阈下摆幅(SS)。各种优点图(FOMs)的结果表明，gaas基的嵌入式栅极dg - jlmosfet对于即将到来的纳米技术的推进是非常可行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2023 International Conference on Electrical, Computer and Communication Engineering (ECCE)

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