Wang Lai, Luo Yi, Han Yanjun, Li Hongtao, Xi Guangyi, Jiang Yang, Zhao Wei
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引用次数: 0
Abstract
InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.
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