R. Montgomery, A. Feygenson, P. Smith, R. D. Yadvish, R. Hamm, H. Temkin
{"title":"A 28 GHz transimpedance preamplifier with inductive bandwidth enhancement","authors":"R. Montgomery, A. Feygenson, P. Smith, R. D. Yadvish, R. Hamm, H. Temkin","doi":"10.1109/IEDM.1992.307392","DOIUrl":null,"url":null,"abstract":"We have built a broadband bipolar transimpedance preamplifier exhibiting an effective transimpedance gain of 39 dB Omega with 1.5 dB/sub p-p/ ripple. Using InP/InGaAs composite collector heterojunction bipolar transistors (HBTs) with an f/sub T/ of 120 GHz and f/sub max/ equal to 59 GHz, a 28 GHz circuit bandwidth was demonstrated. The circuit is compact measuring 975*675 mu m/sup 2/. A low power dissipation of only 48.6 mW was achieved for a single supply voltage of 2.7 V.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
Abstract
We have built a broadband bipolar transimpedance preamplifier exhibiting an effective transimpedance gain of 39 dB Omega with 1.5 dB/sub p-p/ ripple. Using InP/InGaAs composite collector heterojunction bipolar transistors (HBTs) with an f/sub T/ of 120 GHz and f/sub max/ equal to 59 GHz, a 28 GHz circuit bandwidth was demonstrated. The circuit is compact measuring 975*675 mu m/sup 2/. A low power dissipation of only 48.6 mW was achieved for a single supply voltage of 2.7 V.<>
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