A Zero-IF Sub-Harmonic Mixer with High LO-RF Isolation using 0.18 μm CMOS Technology

H. Hsu, Tai-Hsing Lee
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引用次数: 12

Abstract

In this study, the authors introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage
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采用0.18 μm CMOS技术的高LO-RF隔离的零中频次谐波混频器
在本研究中,作者采用0.18μm CMOS技术,在5GHz频段引入了一种具有高隔离度的零中频次谐波混频器。在AB级和混频器核心之间放置LC-tank可以提高LO和RF端口之间的隔离。LO和RF端口之间的隔离度为48 dB;在2.5V电源电压下消耗7mA,获得9.5dB转换增益
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