{"title":"A broadband (1-20 GHz) SiGe monolithic SPDT switch","authors":"R. Tayrani, M. Teshiba, G. Sakamoto","doi":"10.1109/GAAS.2002.1049072","DOIUrl":null,"url":null,"abstract":"This paper reports the performances of a broadband monolithic SiGe PIN diode SPDT switch that is based on the IBM 5-HP SiGe foundry process. The switch contains a tightly integrated series-shunt vertical PIN structure in each arm having a junction area of 50 /spl mu/m/sup 2/ and 80 /spl mu/m/sup 2/ respectively. On-chip resistive bias networks are used to ensure broadband operation. The switch \"ON\" arm demonstrates a path-loss of less than 1.3 dB while its \"OFF\" arm maintains an isolation of greater than 40 dB across 1-20 GHz. The total DC power consumption for maintaining such a high performance is only 22 mW. The switching speed, the 1-dB insertion loss compression point and the third order intercept point were found to be <1 nsec, 19 dBm, and 30.0 dBm respectively.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports the performances of a broadband monolithic SiGe PIN diode SPDT switch that is based on the IBM 5-HP SiGe foundry process. The switch contains a tightly integrated series-shunt vertical PIN structure in each arm having a junction area of 50 /spl mu/m/sup 2/ and 80 /spl mu/m/sup 2/ respectively. On-chip resistive bias networks are used to ensure broadband operation. The switch "ON" arm demonstrates a path-loss of less than 1.3 dB while its "OFF" arm maintains an isolation of greater than 40 dB across 1-20 GHz. The total DC power consumption for maintaining such a high performance is only 22 mW. The switching speed, the 1-dB insertion loss compression point and the third order intercept point were found to be <1 nsec, 19 dBm, and 30.0 dBm respectively.
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