{"title":"A 70 and 210 GHz LO generator in 65nm CMOS","authors":"C. Bryant, J. Lindstrand, H. Sjoland, M. Tormanen","doi":"10.1109/RFIT.2012.6401658","DOIUrl":null,"url":null,"abstract":"A CMOS LO-Generator operating at 70GHz and 210GHz by the use of a frequency tripling technique is presented. A cross-coupled NMOS VCO is used together with a single-balanced mixer to achieve low phase-noise. The chip measures a single-ended output power of -15dBm in the 70GHz band, with 6.54% tuning range, from a 1.2V supply while consuming 7.2mW. A phase-noise of -113.2dBc/Hz is measured at 10MHz frequency offset from a carrier frequency of 73.8GHz. This yields a phase noise figure of merit, FOM, of 181.8dB, and with the tuning range taken into account, a FOMT of 178dB. By using this technique neither FOM nor FOMT are degraded in the 210GHz band since both power consumption and tuning range are maintained.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"31 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2012.6401658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A CMOS LO-Generator operating at 70GHz and 210GHz by the use of a frequency tripling technique is presented. A cross-coupled NMOS VCO is used together with a single-balanced mixer to achieve low phase-noise. The chip measures a single-ended output power of -15dBm in the 70GHz band, with 6.54% tuning range, from a 1.2V supply while consuming 7.2mW. A phase-noise of -113.2dBc/Hz is measured at 10MHz frequency offset from a carrier frequency of 73.8GHz. This yields a phase noise figure of merit, FOM, of 181.8dB, and with the tuning range taken into account, a FOMT of 178dB. By using this technique neither FOM nor FOMT are degraded in the 210GHz band since both power consumption and tuning range are maintained.