Wu Jin, Xie Fang-qing, Zhang Qing-zhe, Liu Ji-wen, Chen You-cun, Lin Zhang-Da
{"title":"GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH 4 /O 2 /H 2 ATMOSPHERE","authors":"Wu Jin, Xie Fang-qing, Zhang Qing-zhe, Liu Ji-wen, Chen You-cun, Lin Zhang-Da","doi":"10.1088/1004-423X/8/12/009","DOIUrl":null,"url":null,"abstract":"Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 x 10(8) cm(-2) was realized in 3 min by near-surface glow discharge. The as-grown films were characterized. by scanning electron microscopy (SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H-2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM.","PeriodicalId":188146,"journal":{"name":"Acta Physica Sinica (overseas Edition)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Acta Physica Sinica (overseas Edition)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1004-423X/8/12/009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 x 10(8) cm(-2) was realized in 3 min by near-surface glow discharge. The as-grown films were characterized. by scanning electron microscopy (SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H-2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM.
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