{"title":"Enhancing the Speed of SiGe HBTs Using fT-Doubler Techniques","authors":"Jiahui Yuan, J. Cressler","doi":"10.1109/SMIC.2008.19","DOIUrl":null,"url":null,"abstract":"A peak f<sub>T</sub> of 325 GHz is achieved, for the first time, in a 130 nm, 200 GHz, 3<sup>rd</sup>-generation SiGe HBT technology at 300 K, by utilizing f<sub>T</sub>-doubler techniques. This speed enhancement is equivalent to gaining an additional generational node (from 3<sup>rd</sup> to 4<sup>th</sup>), with no underlying change to the transistor profile or lithography. The f<sub>T</sub>-doubler can be treated as a single transistor unit cell during circuit design, which is verified by the investigation of its small-signal equivalent circuit. Reduced C<sub>pi</sub> is demonstrated to be the root origin of the f<sub>T</sub>-enhancement. The impact of emitter geometry on performance is investigated. A record f<sub>T</sub> of 438 GHz is achieved at 93 K.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.19","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
A peak fT of 325 GHz is achieved, for the first time, in a 130 nm, 200 GHz, 3rd-generation SiGe HBT technology at 300 K, by utilizing fT-doubler techniques. This speed enhancement is equivalent to gaining an additional generational node (from 3rd to 4th), with no underlying change to the transistor profile or lithography. The fT-doubler can be treated as a single transistor unit cell during circuit design, which is verified by the investigation of its small-signal equivalent circuit. Reduced Cpi is demonstrated to be the root origin of the fT-enhancement. The impact of emitter geometry on performance is investigated. A record fT of 438 GHz is achieved at 93 K.
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