Micromachined wide bandpass filter

Abstract

RF-MEMS filters will substitute conventional filters as they offer better performance at optimum cost. A bandpass filter is one such filter which is designed using microelectro-mechanical systems (MEMS) technology which have low insertion loss, high quality factors, good temperature stability and have various unique advantages. This paper reports on the implementation of wide bandpass filter using a silicon based integrated passive device technology. The wide bandpass filter is realized on a micromachined (MEMS) silicon substrate. The filter occupies only 1mm x 0.56mm die area and the band pass is achieved using spiral inductors and a gap capacitor. The wide band pass filter is designed using a coplanar wave guide transmission line which is placed on a silicon substrate operating over K-band to W-band. This design is implemented in High Frequency Structural Simulator (HFSS) software. The simulated results shows that the design has the return loss of -14.7dB and insertion loss of -1.02dB. A wide bandwidth of 74GHz has been achieved.