Degradation Mechanisms in Rewritable N-Channel FAMOS Devices

Abstract

Electrically rewritable n-channel FAMOS devices were fabricated with a floating polycrystalline silicon gate and an Al control gate. The Al gate is used to control injection of holes or electrons from the avalanching drain diffusion onto the floating gate. Charge retention by the floating gate and device degradation due to multiple write/erase cycling is discussed.