Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362704
Joseph E. Brodeur
High temperature operating life test gives quick feedback on the processes used in fabrication of semiconductor wafers. The relatively high failure rate of the (so-called) freaks is quickly demonstrated in such a test and can indicate a marginal or out of control process. This method of process control concentrates on the initial fallout as a means of determining the reliability of final products. Greater than 150°C stress temperatures should not be applied to plastic encapsulated devices. Since most epoxies have glass transition temperatures in the range of 150°C to 180°C permanent damage to the package could result.
{"title":"Process Control by Means of Accelerated Testing","authors":"Joseph E. Brodeur","doi":"10.1109/IRPS.1975.362704","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362704","url":null,"abstract":"High temperature operating life test gives quick feedback on the processes used in fabrication of semiconductor wafers. The relatively high failure rate of the (so-called) freaks is quickly demonstrated in such a test and can indicate a marginal or out of control process. This method of process control concentrates on the initial fallout as a means of determining the reliability of final products. Greater than 150°C stress temperatures should not be applied to plastic encapsulated devices. Since most epoxies have glass transition temperatures in the range of 150°C to 180°C permanent damage to the package could result.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"354 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122795675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362697
E. F. Thomas
The degradation of radiant power output (Po) for silicon doped GaAs infrared emitting diodes was established for dc current stress levels ranging from 70 to 175 A/cm2. Through an analysis of the forward I-V data and specially performed tests, it was de-termined that the initial degradation was due to increases in the space charge recom-bination current while later degradation was due to decreases in the diffusion current. The initial changes in the space charge recombination current were caused by the diffusion of zinc atoms to the junction region via the Longini mechanism. Zinc diffusion also resulted in an initial increase in Po both under stress and room temperature storage conditions. The mechan-ism responsible for the decrease in the diffusion current was not identified, but most probably involved the silicon dopant atoms.
{"title":"The Mechanisms of Current Induced Degradation in a GaAs Light Emitting Diode","authors":"E. F. Thomas","doi":"10.1109/IRPS.1975.362697","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362697","url":null,"abstract":"The degradation of radiant power output (Po) for silicon doped GaAs infrared emitting diodes was established for dc current stress levels ranging from 70 to 175 A/cm2. Through an analysis of the forward I-V data and specially performed tests, it was de-termined that the initial degradation was due to increases in the space charge recom-bination current while later degradation was due to decreases in the diffusion current. The initial changes in the space charge recombination current were caused by the diffusion of zinc atoms to the junction region via the Longini mechanism. Zinc diffusion also resulted in an initial increase in Po both under stress and room temperature storage conditions. The mechan-ism responsible for the decrease in the diffusion current was not identified, but most probably involved the silicon dopant atoms.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121417430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362679
D. Olsen, R. Wright, H. Berg
The temperature dependence of the growth rates of intermetallic compounds in the Cu-Sn, Ag-Sn and Ni-Sn systems was determined between 100°C and 213°C for Sn-dipped and Sn-plated samples. Below 175°C the fastest growing intermetallic compound was Ag3Sn. The Ni-Sn compoknd, Ni3Sn, was the slowest growing phase below 150°C, but the fastest growing phase above 175°C. The two Cu-Sn intermetallic phases, Cu3Sn and Cu6Sn5, had a combined growth rate which increases more slowly with temperature than the single intermetallic phases observed in the Ni-Snand Ag-Sn systems. The growth rate data plotted against reciprocal temperature satisfies the Arrhenius relationship and yields a range of apparent activation energies between 14.8 Kcal/mole for Ag3Sn and 37.6 Kcal/mole for Ni3Sn4. The growth of intermetallic compounds can affect the reliability of electronic parts through a reduction in lead solderability or a decrease in the mechanical strength of soldered connections. Lap shear testing of metal strips bonded with Sn demonstrated that strengths of both bonded Ni and Cu strips decrease as the thickness of the intermetallic compounds increase during annealing at 213°C. In the case of Ni-Sn, a 50% reduction in joint strength occurred after only one day-at temperature. For Cu-Sn, the reduction in joint strength occurred at a slower rate, and only a slight decrease was observed in the Ag-Sn lap shear samples. The degradation observed in the Ni-Sn and Cu-Sn systems is related to the growth rate of brittle intermetallics forming at the interface (i.e. Ni3Sn4 and Cu3Sn).
{"title":"Effects of Intermetallics on the Reliability of Tin Coated Cu, Ag, and Ni Parts","authors":"D. Olsen, R. Wright, H. Berg","doi":"10.1109/IRPS.1975.362679","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362679","url":null,"abstract":"The temperature dependence of the growth rates of intermetallic compounds in the Cu-Sn, Ag-Sn and Ni-Sn systems was determined between 100°C and 213°C for Sn-dipped and Sn-plated samples. Below 175°C the fastest growing intermetallic compound was Ag3Sn. The Ni-Sn compoknd, Ni3Sn, was the slowest growing phase below 150°C, but the fastest growing phase above 175°C. The two Cu-Sn intermetallic phases, Cu3Sn and Cu6Sn5, had a combined growth rate which increases more slowly with temperature than the single intermetallic phases observed in the Ni-Snand Ag-Sn systems. The growth rate data plotted against reciprocal temperature satisfies the Arrhenius relationship and yields a range of apparent activation energies between 14.8 Kcal/mole for Ag3Sn and 37.6 Kcal/mole for Ni3Sn4. The growth of intermetallic compounds can affect the reliability of electronic parts through a reduction in lead solderability or a decrease in the mechanical strength of soldered connections. Lap shear testing of metal strips bonded with Sn demonstrated that strengths of both bonded Ni and Cu strips decrease as the thickness of the intermetallic compounds increase during annealing at 213°C. In the case of Ni-Sn, a 50% reduction in joint strength occurred after only one day-at temperature. For Cu-Sn, the reduction in joint strength occurred at a slower rate, and only a slight decrease was observed in the Ag-Sn lap shear samples. The degradation observed in the Ni-Sn and Cu-Sn systems is related to the growth rate of brittle intermetallics forming at the interface (i.e. Ni3Sn4 and Cu3Sn).","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130015929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362669
R. Dockerty
Electrically rewritable n-channel FAMOS devices were fabricated with a floating polycrystalline silicon gate and an Al control gate. The Al gate is used to control injection of holes or electrons from the avalanching drain diffusion onto the floating gate. Charge retention by the floating gate and device degradation due to multiple write/erase cycling is discussed.
{"title":"Degradation Mechanisms in Rewritable N-Channel FAMOS Devices","authors":"R. Dockerty","doi":"10.1109/IRPS.1975.362669","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362669","url":null,"abstract":"Electrically rewritable n-channel FAMOS devices were fabricated with a floating polycrystalline silicon gate and an Al control gate. The Al gate is used to control injection of holes or electrons from the avalanching drain diffusion onto the floating gate. Charge retention by the floating gate and device degradation due to multiple write/erase cycling is discussed.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130526623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362689
G. A. Scoggan, B. Agarwala, P. Peressini, A. Brouillard
The electromigration lifetimes of thin-film Al-Cu, Al-Cu-Si, and Ag conductors were measured as a function of stripe width. Both the median lifetime and the standard deviation of the lognormal failure distribution were observed to depend strongly on the stripe width; this finding indicates that a narrower stripe is less reliable. This width dependence is interpreted in terms of the microstructural characteristics of the films.
{"title":"Width Dependence of Electromigration Life in Al-Cu Al-Cu-Si, and Ag Conductors","authors":"G. A. Scoggan, B. Agarwala, P. Peressini, A. Brouillard","doi":"10.1109/IRPS.1975.362689","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362689","url":null,"abstract":"The electromigration lifetimes of thin-film Al-Cu, Al-Cu-Si, and Ag conductors were measured as a function of stripe width. Both the median lifetime and the standard deviation of the lognormal failure distribution were observed to depend strongly on the stripe width; this finding indicates that a narrower stripe is less reliable. This width dependence is interpreted in terms of the microstructural characteristics of the films.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122495868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362668
S. Abbas, C. Barile
To implement an electrically rewritable device for Read Mostly Memory applications, the structure of the FAMOS device is modified by incorporating an additional metal gate on top of the floating polysilicon gate and separated from it by a specially grown thermal oxide. Electrical erasure is accomplished by applying a positive voltage pulse to the metal gate. The "write" voltage has been lowered by using ion implantation. Reliability and charge retention are discussed and their impact on the design of the device is assessed. An empirical model for the conduction of oxide between the floating gate and the metal gate is developed and results are projected and compared with data obtained on the device.
为了实现用于Read most Memory应用的电可重写器件，FAMOS器件的结构被修改，通过在浮动多晶硅栅极顶部合并额外的金属栅极，并通过特殊生长的热氧化物与之分离。电擦除是通过向金属栅极施加正电压脉冲来完成的。通过离子注入降低了写入电压。讨论了可靠性和电荷保留，并评估了它们对器件设计的影响。建立了氧化物在浮栅和金属栅之间导电的经验模型，并将结果与装置上得到的数据进行了投影和比较。
{"title":"P-Channel Rewritable Avalanche Injection Device (RAID) Operation and Degradation Mechanisms","authors":"S. Abbas, C. Barile","doi":"10.1109/IRPS.1975.362668","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362668","url":null,"abstract":"To implement an electrically rewritable device for Read Mostly Memory applications, the structure of the FAMOS device is modified by incorporating an additional metal gate on top of the floating polysilicon gate and separated from it by a specially grown thermal oxide. Electrical erasure is accomplished by applying a positive voltage pulse to the metal gate. The \"write\" voltage has been lowered by using ion implantation. Reliability and charge retention are discussed and their impact on the design of the device is assessed. An empirical model for the conduction of oxide between the floating gate and the metal gate is developed and results are projected and compared with data obtained on the device.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122837038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362673
S. N. Lee, R. Kjar
A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a " V"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliability.
{"title":"SOS Island Edge Profiles Following Oxidation","authors":"S. N. Lee, R. Kjar","doi":"10.1109/IRPS.1975.362673","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362673","url":null,"abstract":"A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a \" V\"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliability.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133454478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362706
Morton Stitch
{"title":"High Temperature Operating Tests (HTOT); A Control for Contaminated Microcircuit Processes","authors":"Morton Stitch","doi":"10.1109/IRPS.1975.362706","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362706","url":null,"abstract":"","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114959758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362699
R. F. Redemske
{"title":"Multilevel Substrate Technology and Epoxy Component Attach for Hybrid Fabrication","authors":"R. F. Redemske","doi":"10.1109/IRPS.1975.362699","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362699","url":null,"abstract":"","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124560745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：