Thermal component models for electro thermal analysis of multichip power modules

J. J. Rodriguez, J. Reichl, Z. Parrilla, Allen R. Hefner, D. Berning, Miguel Velez-Reyes, Jih-Sheng Lai
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引用次数: 29

Abstract

Thermal component models are developed for multi-chip of insulated gate bipolar transistor (IGBT) power electronic modules (PEM) and associated high-power converter heat sinks. The models are implemented in SABER and are combined with the electro-thermal IGBT and diode models to simulate the electro-thermal performance of high power converter systems. The thermal component models are parameterized in terms of structural and material parameters so that they can be readily used to develop a library of component models for the various commercially available power modules. The paper presents model development and implementation in SABER, simulation results, and validation using experimental data.
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用于多芯片电源模块电热分析的热元件模型
建立了多芯片绝缘栅双极晶体管(IGBT)功率电子模块(PEM)及其相关大功率变换器散热器的热元件模型。该模型在SABER中实现,并与电热IGBT和二极管模型相结合,用于模拟大功率变换器系统的电热性能。热组件模型是根据结构和材料参数参数化的,因此它们可以很容易地用于开发各种商用功率模块的组件模型库。本文介绍了模型在SABER中的开发和实现,仿真结果以及实验数据的验证。
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