{"title":"A comprehensive conduction regime in organic light emitting diodes","authors":"Farzad Ahmadi Gooraji, M. Sharifi","doi":"10.1109/IRANIANCEE.2012.6292315","DOIUrl":null,"url":null,"abstract":"A comprehensive model is proposed for calculating I-V characteristic in single layer single carrier organic light emitting diodes (OLEDs). Unlike previous works, the model doesn't have any pre-assumption regarding the conduction regimes of Injection Limited Current (ILC) and Space Charge Limited Current (SCLC). For the first time, a quantitative index for the conduction regime is introduced which is included all the important factors regarding the conduction regime, such as bias voltage, barrier height, carrier mobility, device length, and temperature. Furthermore, the Index value versus barrier height and carrier mobility is examined in detail. Subsequently, it is demonstrated that the results agree extremely well with experimental data in a much wider range of bias than any before reported models.","PeriodicalId":308726,"journal":{"name":"20th Iranian Conference on Electrical Engineering (ICEE2012)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"20th Iranian Conference on Electrical Engineering (ICEE2012)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2012.6292315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A comprehensive model is proposed for calculating I-V characteristic in single layer single carrier organic light emitting diodes (OLEDs). Unlike previous works, the model doesn't have any pre-assumption regarding the conduction regimes of Injection Limited Current (ILC) and Space Charge Limited Current (SCLC). For the first time, a quantitative index for the conduction regime is introduced which is included all the important factors regarding the conduction regime, such as bias voltage, barrier height, carrier mobility, device length, and temperature. Furthermore, the Index value versus barrier height and carrier mobility is examined in detail. Subsequently, it is demonstrated that the results agree extremely well with experimental data in a much wider range of bias than any before reported models.