A resistorless switched bandgap voltage reference with offset cancellation

H. Klimach, A. L. T. Costa, M. F. C. Monteiro, S. Bampi
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引用次数: 5

Abstract

This work presents a novel Switched-capacitor Bandgap Voltage Reference (SCBGR) circuit that dispenses entirely the use of resistors. The vEB negative drift and the thermal voltage (VT) positive drift voltages are both generated by the same PNP vertical bipolar transistor, avoiding diode mismatch problems. The current sources that are used to generate different junction current densities are averaged in the switching process, reducing their mismatch impact on the circuit performance. A switched-capacitor circuit stores and processes these voltages, generating the bandgap reference voltage after 5 clock cycles. Since capacitors are used instead of resistors, variability problems like average process spread and device mismatches are reduced. The proposed topology was designed and simulated in CMOS for 180 nm process. This paper presents a systematic comparison to the traditional dual-BJT BGR and demonstrates the better performance of this new topology with respect to the former. Monte Carlo simulation shows significantly lower spread resulting from variations in the output reference voltage and in its temperature coefficient (TC).
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带偏移抵消的无电阻开关带隙基准电压
本文提出了一种新颖的开关电容带隙基准电压电路,完全不使用电阻器。vEB负漂移和热电压(VT)正漂移电压都是由同一个PNP垂直双极晶体管产生的,避免了二极管失配问题。用于产生不同结电流密度的电流源在开关过程中被平均,减少了它们的失配对电路性能的影响。开关电容电路存储和处理这些电压,在5个时钟周期后产生带隙参考电压。由于使用电容器而不是电阻器,因此减少了平均工艺扩散和器件不匹配等可变性问题。并在180nm制程的CMOS中进行了拓扑设计和仿真。本文与传统的双bjt BGR进行了系统的比较,并证明了这种新拓扑相对于前者具有更好的性能。蒙特卡罗模拟表明,由于输出参考电压及其温度系数(TC)的变化,扩展显著降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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