Efficient FDTD S-parameter calculation of microwave structures with TEM ports

S. Van den Berghe, F. Olyslager, D. De Zutter
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引用次数: 5

Abstract

We have presented an accurate and efficient method for S-parameter calculation. The method uses a variation on the total field-scattered field formalism, the modes are injected and extracted at the interface between the total field and the error field regions. As such the propagated energy never actually reaches the boundary conditions, so these conditions can be less stringent, and should require less resources. Furthermore, the mode distributions are used to excite the structure and to calculate the amplitude of the propagating mode. This allows us to place both the excitation mechanism and the port regions very close to the simulated structure, again saving resources, as well as preserving the accuracy of the method. However, due to the dispersion of non-TEM modes, this method can only be used if the mode of interest is TEM. Our method has been compared with the method of moments approach and the results are almost identical.
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带TEM端口的微波结构时域有限差分s参数的高效计算
本文提出了一种精确有效的s参数计算方法。该方法采用一种变异的全场-散射场形式,在全场和误差场的交界面注入和提取模态。因此,传播的能量实际上从未达到边界条件,因此这些条件可以不那么严格,并且应该需要更少的资源。此外,利用模态分布来激励结构并计算传播模态的振幅。这使我们能够将激励机制和端口区域放置在非常接近模拟结构的位置,再次节省资源,并保持方法的准确性。然而,由于非瞬变电磁法模式的色散,这种方法只能在感兴趣的模式是瞬变电磁法的情况下使用。将本文方法与矩量法进行了比较,结果基本一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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