Design and modeling of PIN photodiode using MEMS technology

Shubankar Kumar, T. Shanmuganantham
{"title":"Design and modeling of PIN photodiode using MEMS technology","authors":"Shubankar Kumar, T. Shanmuganantham","doi":"10.1109/ICCS1.2017.8326015","DOIUrl":null,"url":null,"abstract":"This Paper describes a micro PIN photodiode model using Micro-electromechanical Systems (MEMS) technology. The model is developed using Comsol Multiphysics Software. This interface combines the semiconductor interface with the electromagnetic waves, frequency domain interface and is suitable for modeling direct band-gap optoelectronic semiconductor devices. This device is operated at a wavelength of 725 nm for the peak value of the current. The width and the height of the device is 0.5[μm] and 1[μm] respectively. This PIN photodiode can be uses as a light sensor for the solar applications like sun sensor, solar light, solar battery and solar instruments. It is also suitable for the industrial and inter terrestrial applications.","PeriodicalId":367360,"journal":{"name":"2017 IEEE International Conference on Circuits and Systems (ICCS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS1.2017.8326015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This Paper describes a micro PIN photodiode model using Micro-electromechanical Systems (MEMS) technology. The model is developed using Comsol Multiphysics Software. This interface combines the semiconductor interface with the electromagnetic waves, frequency domain interface and is suitable for modeling direct band-gap optoelectronic semiconductor devices. This device is operated at a wavelength of 725 nm for the peak value of the current. The width and the height of the device is 0.5[μm] and 1[μm] respectively. This PIN photodiode can be uses as a light sensor for the solar applications like sun sensor, solar light, solar battery and solar instruments. It is also suitable for the industrial and inter terrestrial applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于MEMS技术的PIN光电二极管设计与建模
本文介绍了一种基于微机电系统(MEMS)技术的微型PIN光电二极管模型。该模型是用Comsol Multiphysics软件开发的。该接口将半导体接口与电磁波、频域接口相结合,适用于直接带隙光电半导体器件的建模。该装置的工作波长为725nm,为电流的峰值。器件的宽度为0.5[μm],高度为1[μm]。这种PIN光电二极管可以用作太阳能应用的光传感器,如太阳传感器,太阳能灯,太阳能电池和太阳能仪器。它也适用于工业和地面应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Screen content coding using code repository for compound image compression Survey of data and storage security in cloud computing ORBOT — An efficient & intelligent mono copter Design of multiband microstrip patch antenna for IOT applications Arc-shaped cantilever beam RF MEMS switch for low actuation voltage
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1