{"title":"Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs","authors":"Yu Fu, Yuehang Xu, R. Xu, Jianjun Zhou, Y. Kong","doi":"10.1109/EDAPS.2017.8276947","DOIUrl":null,"url":null,"abstract":"A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2017.8276947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.
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