{"title":"Fundamentals and current status of steep-slope tunnel field-effect transistors","authors":"A. Seabaugh","doi":"10.1109/ESSCIRC.2011.6044914","DOIUrl":null,"url":null,"abstract":"The tunnel field-effect transistor (TFET) utilizes a metal-oxide-semiconductor MOS structure to control the Zener tunneling current in a p+n+ junction. Current understanding and status in the development of TFETs with steep inverse-subthreshold-slope is reviewed.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"38 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2011.6044914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The tunnel field-effect transistor (TFET) utilizes a metal-oxide-semiconductor MOS structure to control the Zener tunneling current in a p+n+ junction. Current understanding and status in the development of TFETs with steep inverse-subthreshold-slope is reviewed.
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