Towards Analysing the Effect of Hybrid Caches on the Temperature of Tiled Chip Multi-Processors

Ashwini A. Kulkarni, Khushboo Rani, Sukarn Agarwal, S. P. Mahajan, H. Kapoor
{"title":"Towards Analysing the Effect of Hybrid Caches on the Temperature of Tiled Chip Multi-Processors","authors":"Ashwini A. Kulkarni, Khushboo Rani, Sukarn Agarwal, S. P. Mahajan, H. Kapoor","doi":"10.1109/ISES.2018.00021","DOIUrl":null,"url":null,"abstract":"Recent advances in CMOS technology adds more transistors to the chip that are utilised for improving processing capability by adding multiple processing components. These multiple cores raise the data demands leading to larger on-chip caches. Together, these add to the energy consumption as well as heat dissipation. Increase in chip temperature requires efficient cooling mechanisms as high temperatures can damage the onchip circuitry. Thus, the performance enhancement comes at the cost of higher power budget as well as temperature. Large onchip caches occupy significant area of the chip and are major contributors to leakage energy. It is known that as technology scales leakage becomes a prominent component which also affects the chip temperature. This paper aims to control the chip temperature by controlling the leakage energy dissipated by the last level caches (LLCs). Towards this we propose a hybrid LLC that uses a combination of SRAM cache banks and non-volatile memory (NVM) technology based STT-RAM banks. STT-RAM technology has the advantage of high density and low leakage.We demonstrate that low-leakage STT-RAM banks help in reducing the temperature of the tile in which they are located and it also assists in reducing the average chip temperature. Experimental evaluation on an isoarea and iso-capacity architecture that uses a hybrid LLC shows reduction the average chip temperature as well as gives gains in static energy and EDP compared to baseline architecture.","PeriodicalId":447663,"journal":{"name":"2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISES.2018.00021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Recent advances in CMOS technology adds more transistors to the chip that are utilised for improving processing capability by adding multiple processing components. These multiple cores raise the data demands leading to larger on-chip caches. Together, these add to the energy consumption as well as heat dissipation. Increase in chip temperature requires efficient cooling mechanisms as high temperatures can damage the onchip circuitry. Thus, the performance enhancement comes at the cost of higher power budget as well as temperature. Large onchip caches occupy significant area of the chip and are major contributors to leakage energy. It is known that as technology scales leakage becomes a prominent component which also affects the chip temperature. This paper aims to control the chip temperature by controlling the leakage energy dissipated by the last level caches (LLCs). Towards this we propose a hybrid LLC that uses a combination of SRAM cache banks and non-volatile memory (NVM) technology based STT-RAM banks. STT-RAM technology has the advantage of high density and low leakage.We demonstrate that low-leakage STT-RAM banks help in reducing the temperature of the tile in which they are located and it also assists in reducing the average chip temperature. Experimental evaluation on an isoarea and iso-capacity architecture that uses a hybrid LLC shows reduction the average chip temperature as well as gives gains in static energy and EDP compared to baseline architecture.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
混合缓存对平铺芯片多处理器温度影响的分析
CMOS技术的最新进展为芯片增加了更多的晶体管,通过增加多个处理组件来提高处理能力。这些多核提高了数据需求,导致更大的片上缓存。总之,这些增加了能源消耗和散热。芯片温度的升高需要有效的冷却机制,因为高温会损坏芯片上的电路。因此,性能增强是以更高的功率预算和温度为代价的。大型片上缓存占据了芯片的很大面积,是泄漏能量的主要贡献者。众所周知,随着技术的发展,泄漏成为影响芯片温度的重要因素。本文旨在通过控制最后一级缓存(lc)的泄漏能量来控制芯片温度。为此,我们提出了一种混合LLC,它使用SRAM缓存库和基于STT-RAM库的非易失性存储器(NVM)技术的组合。STT-RAM技术具有高密度和低泄漏的优点。我们证明,低泄漏STT-RAM组有助于降低其所在瓦片的温度,并且还有助于降低平均芯片温度。使用混合LLC的等面积等容量架构的实验评估表明,与基线架构相比,降低了平均芯片温度,并获得了静态能量和EDP的增益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Characterization of Thin Zirconia Films Deposited by ECD on ITO Coated Glass for Biosensing Applications Development of a Multi-Fog Based Water Quality Monitoring System Using Bio-Sensing Platform A Power Efficient Crossbar Arbitration in Multi-NoC for Multicast and Broadcast Traffic Design of Software and Data Analytics for Self-Powered Wireless IoT Devices Modeling of Square Microhotplate and its Validation with Experimental Results
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1