M.-T. Hsu, Te-Yen Chiu, Sirao Wu, Y. Cheng, C.-H. Li, C. Kuo
{"title":"A silicon-based parabolic sub-THz reflector antenna for gain enhancement and near-field focus applications","authors":"M.-T. Hsu, Te-Yen Chiu, Sirao Wu, Y. Cheng, C.-H. Li, C. Kuo","doi":"10.1109/MEMSYS.2018.8346678","DOIUrl":null,"url":null,"abstract":"This paper presents the first silicon-based parabolic Sub-THz reflector antenna with corresponding fabrication processes. The antenna is side fed with an on-chip 340 GHz patch antenna on a reflector made of stacked micromachined silicon substrates with a parabolic-shaped Kapton film coated with aluminum on top. The antenna with a size of 18 ×18 ×4 mm3 and an aperture of ∼10mm can be easily integrated with monolithic microwave integrated circuit sources, i.e. 40 nm CMOS triple-push oscillator in this case, and exhibit not only ∼12.4 dB directive gain enhancement and 4.34° HPBW (Half Power Beam Width) for far field radiation but also an excellent near field focus characteristic with a 28.5 mm depth of field (DOF).","PeriodicalId":400754,"journal":{"name":"2018 IEEE Micro Electro Mechanical Systems (MEMS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2018.8346678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents the first silicon-based parabolic Sub-THz reflector antenna with corresponding fabrication processes. The antenna is side fed with an on-chip 340 GHz patch antenna on a reflector made of stacked micromachined silicon substrates with a parabolic-shaped Kapton film coated with aluminum on top. The antenna with a size of 18 ×18 ×4 mm3 and an aperture of ∼10mm can be easily integrated with monolithic microwave integrated circuit sources, i.e. 40 nm CMOS triple-push oscillator in this case, and exhibit not only ∼12.4 dB directive gain enhancement and 4.34° HPBW (Half Power Beam Width) for far field radiation but also an excellent near field focus characteristic with a 28.5 mm depth of field (DOF).