J. Hacker, M. Urteaga, D. Mensa, R. Pierson, Mike E. B. Jones, Z. Griffith, M. Rodwell
{"title":"250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz","authors":"J. Hacker, M. Urteaga, D. Mensa, R. Pierson, Mike E. B. Jones, Z. Griffith, M. Rodwell","doi":"10.1109/MWSYM.2008.4633188","DOIUrl":null,"url":null,"abstract":"An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based common-base monolithic power amplifier has been fabricated and has a measured small signal gain of 4.8 dB at 324 GHz. This is the highest frequency DHBT MMIC amplifier reported to date. The submillimeter-wave power amplifier MMIC incorporates microstrip transmission lines on a 10-μm thick layer of BCB dielectric. The thick BCB layer provides mode-free low-loss millimeter-wave transmission lines without requiring a thin fragile InP substrate and through-wafer VIAs as with conventional microstrip placed directly on the semiconductor substrate. The single-stage power amplifier has a compact size of only 0.124 mm2 and a measured saturated output power of 1.3 milliWatts with a dc input power of 1.4 V at 12 mA. These results demonstrate the capability of 250nm InP DHBT technology to enable power amplifiers for submillimeter-wave applications.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2008.4633188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41
Abstract
An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based common-base monolithic power amplifier has been fabricated and has a measured small signal gain of 4.8 dB at 324 GHz. This is the highest frequency DHBT MMIC amplifier reported to date. The submillimeter-wave power amplifier MMIC incorporates microstrip transmission lines on a 10-μm thick layer of BCB dielectric. The thick BCB layer provides mode-free low-loss millimeter-wave transmission lines without requiring a thin fragile InP substrate and through-wafer VIAs as with conventional microstrip placed directly on the semiconductor substrate. The single-stage power amplifier has a compact size of only 0.124 mm2 and a measured saturated output power of 1.3 milliWatts with a dc input power of 1.4 V at 12 mA. These results demonstrate the capability of 250nm InP DHBT technology to enable power amplifiers for submillimeter-wave applications.
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