{"title":"Amplifier Applications of Millimeter Wave InP GUNN Devices","authors":"R. Hamilton, S. Long","doi":"10.1109/MWSYM.1977.1124349","DOIUrl":null,"url":null,"abstract":"Amplifier evaluations in the 30 to 45 GHz frequency range have yielded device noise figures below 9 dB with up to 5 dB associated gain. Other reaults and a device model in close agreement with measured impedances are presented.","PeriodicalId":299607,"journal":{"name":"1977 IEEE MTT-S International Microwave Symposium Digest","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1977.1124349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Amplifier evaluations in the 30 to 45 GHz frequency range have yielded device noise figures below 9 dB with up to 5 dB associated gain. Other reaults and a device model in close agreement with measured impedances are presented.