DMG insulated shallow extension cylindrical GAA Schottky Barrier MOSFET for removal of ambipolarity: A novel approach

Abstract

This paper proposes a novel Dual Metal Gate (DMG) Insulated Shallow Extension (ISE) Cylindrical Gate All Around (CGAA) Schottky Barrier (SB) MOSFET to eliminate the ambipolar behaviour of SB-CGAA MOSFET by blocking the metal induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. The Ion/Ioff ratio of DMG-ISE-CGAA-SB MOSFET increases by 362 times offering steeper subthreshold slope (67.59 mV/decade) and improved cut-off frequency makes it attractive candidate for CMOS digital circuit design.