V. Yerokhov, S. Nichkalo, A. Druzhinin, O. Ierokhova
{"title":"Antireflective properties of silicon modified by electrochemical and chemical methods","authors":"V. Yerokhov, S. Nichkalo, A. Druzhinin, O. Ierokhova","doi":"10.1109/UKRMICO.2016.7739610","DOIUrl":null,"url":null,"abstract":"The paper describes the prospects of preparing an antireflective coating based on porous silicon by electrochemical and chemical methods for photovoltaic converters with improved parameters. Application of the silicon-based porous textures as an efficient and commercially viable coating has to be maximally adapted to processes of the silicon solar cell manufacturing. In this paper the electrochemical and chemical techniques are applied to form the textures on the Si wafer surface and improve the antireflective properties of Si.","PeriodicalId":257266,"journal":{"name":"2016 International Conference Radio Electronics & Info Communications (UkrMiCo)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference Radio Electronics & Info Communications (UkrMiCo)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UKRMICO.2016.7739610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper describes the prospects of preparing an antireflective coating based on porous silicon by electrochemical and chemical methods for photovoltaic converters with improved parameters. Application of the silicon-based porous textures as an efficient and commercially viable coating has to be maximally adapted to processes of the silicon solar cell manufacturing. In this paper the electrochemical and chemical techniques are applied to form the textures on the Si wafer surface and improve the antireflective properties of Si.