Design and fabrication of CPW to dielectric image-guide transitions at 60 GHz on SOI

M. Basha, B. Biglarbegian, S. Gigoyan, S. Safavi-Naeini
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引用次数: 3

Abstract

In this paper, a novel millimeter-wave dielectric image-guide to CPW transition has been designed and fabricated using micromachining fabrication techniques. The new provided technology uses high resistivity SOI wafer to implement a low loss dielectric image guides at the millimeter-wave range of frequencies. The coplanar waveguide is patterned with Aluminum over the dielectric image-guide. The measurement results are in good agreement with the simulation results and show that the insertion loss of the transition is 0.82 dB at 60 GHz.
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在SOI上60 GHz CPW到介电像导转换的设计与制作
本文采用微机械加工技术,设计并制作了一种新型毫米波介质成像波导。新提供的技术使用高电阻率SOI晶圆在毫米波频率范围内实现低损耗介电成像波导。共面波导在电介质成像波导上涂有铝图案。测量结果与仿真结果吻合较好,表明在60 GHz时过渡的插入损耗为0.82 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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